Material Science & Nanotechnology

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Chemical Vapor Deposition

TableTop PA-MOCVD Systems NMC-3000

NANO-MASTER has developed the world's first table top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) system for GaN, InGaN and AlGaN deposition processes. In this unique system, having a plasma source N2 is used instead of NH3 for growing nitrides thus eliminating abatment of NH3 and lowering H2 content in the films. Plasma enhancement via RF showerhead plasma source also allows lower deposition temperatures (600°C versus 1100°C) making it possible to offer this process in a table top system.

Pricing & Availability Download Catalogue

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Features

Table top system
10" SS chamber
RF plasma source with shower head gas distribution
Auto tuner
4" Substrate holder, heated up to 900°C
Five bubblers with individual cooling/heating baths
Heated gas lines
Additional MFC’s
250l/s turbomolecular pumping package
5x10^-7 torr base pressure
Fully automated PC based, recipe driven
LabVIEW user interface
EMO protection and safety interlocks

Applications

III-V Semiconductor layers
Blue LEDs
Laser Diodes
InN Nanorods in UV-Vis-IR optoelectronics
MoS₂, BN and Graphene in 3D and 2D materials

Options

Stand alone system
ICP or microwave plasma source
14" SS electropolished cubical chamber
8" or 12" substrate holder
700°C rotating substrate holder for 6" platen and 950°C for 4" platen
Additional Bubblers and MFCs
Auto Load/Unload
Cluster configuration compatibility

Specification :

Application	Green LED’s (GaN, InGaN, AlGaN, ...)
	950 °C Platen, 2” Wafer
	5 10-7 Torr Base Pressure
	PC Controlled with LabVIEW
	Recipe Driven, Password Protected
	Fully Safety Interlocked

GSM_Nanomaster_PA-MOCVD_Catalogue1.pdf

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