Material Science & Nanotechnology

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Chemical Vapor Deposition

PECVD Systems NPE-4000

NANO-MASTER's PECVD systems are capable of depositing high quality SiO2, Si3N4, CNT, DLC or SiC films. Depending on application, RF showerhead, Hollow Cathode, ICP or Microwave plasma sources can be used. The platen can accomodate up to 8" wafers and can be biased with RF, Pulsed DC or DC while being heated up to 800°C resistively or with IR lamps. The chamber is evacuated to 5x10-7 Torr pressure range using 250 l/sec turbo molecular pump backed with 5 cfm mechanical pump. The system utilizes LabVIEW PC control for full automation.

Pricing & Availability Download Catalogue

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Features:

13" Al chamber or 14" SS cube chamber
5x10^-7 Torr base pressure attained with turbo pumping package
Plasma sources: RF showerhead, ICP, hollow cathode and microwave
Gas ring for precursors and gases
Platen: 200°C to 800°C, rotating, biasable with RF, low frequency RF, DC, and pulsed DC
MFC's with electropolished gas lines and pneumatic shut-off valves
Fully automated PC based, recipe driven
LabVIEW user interface
EMO protection and safety interlocks

Applications

Options

ICP source for high density plasma
Substrate Pulsed DC bias
Substrate LF bias for film stress control
Rotating platen for coating 3D parts
Auto Load/Unload
Dry Pump
Bubblers for Organo-metallics with heated gas lines
Gas box for toxics gases with toxic gas monitors
End point detection
Various dopants (PH₃, B₂H₆)

Specification :

Stand alone PC controlled system
RF shower head or HCD plasma source
Up to 8” diameter substrates
RF biased substrate holder
Water cooled platen
One carrier gas and two reactive gas input with mass flow controllers
Turbomolecular pump
Vacuum 10-7 torr range base pressure
Pneumatically controlled valves

GSM_Nanomaster_NPE-4000_Catalogue1.pdf

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