The NLD-4000 is a stand alone PC controlled ALD system which is fully automated and safety-interlocked having capabilities to deposit oxides and nitrides (e.g. AlN, GaN, TaN, TiN, Al2O3, ZrO2, LaO2, HfO2) for Semiconductor, Photovoltaic and MEMS applications. It has a 13" aluminum reaction chamber with heated walls and a pneumatically lifted top for easy chamber access. The system features an onboard glovebox which can accomodate an array of up to seven heated or cooled 50cc cylinders for precursors and reactants incorporating fast-pulse delivery valves for pulsed gas input. Unreacted precursors can be captured with a heated filter on the chamber exhaust port. Recipes, temperature setpoints, gas flows, pump-down and vent cycles, and the flushing of delivery lines are all controlled automatically via LabVIEW software. Options include automatic load/unload (without changing system footprint), Planar ICP source with remote plasma for Plasma Enhanced ALD (Planar ICP geometry maintains a small reaction chamber volume for faster cycle times), and turbo-molecular pump for lower base pressures.
Features
Less than 1? uniformity
13" anodized Al chamber
Minimal volume for fast cycle time and throughput
Up to 8" substrate
Heated chamber walls
400°C substrate heater
Onboard precursor glovebox
Up to seven 50cc precursor cylinders
300 l/sec maglev turbomolecular pumping package
5×10-7 torr base pressure
Fast pulse gas delivery valves
Large area filter to capture unreacted precursors
Large area filter to capture unreacted precursors
High aspect ratio structure coating
Fully automated PC based, recipe driven
LabVIEW user interface
Computer controlled safety interlocks
26"x44" footprint with enclosed panels ideal for clean rooms
Applications
High-k dielectrics
Hydrophobic coating
Passivation layer
High aspect ratio diffusion barriers for Cu interconnects
Conformal coatings for micro fluidics applications
Fuel cells, e.g. single metal coating for catalyst layers
Applications
Downstream planar inductively coupled remote plasma source for PE-ALD process
Auto load/unload
Additional precursors
Specification :
Maximum Substrate Size
8”
Substrate Temperature Range
Up to 400°C
Gas Lines
Heated and Electropolished
Precursors
Up to 7 Precursor/Reactant Cylinders
MFC’s
2 Standard, Extras Optional
Plasma Enhanced ALD
Downstream ICP (Optional)
System Control
PC Controlled with LabVIEW and Touchscreen User Interface